Publications Hantke group
Journal Article (12)
1.
Journal Article
3 (4), pp. 1 - 5 (2012)
Performance of Polarization-based Stereoscopy Screens. 3d Research 2.
Journal Article
43, pp. 4344 - 4347 (2008)
Zero-phonon lines of nitrogen-cluster states in GaNxAs1-x:H identified by time-resolved photoluminescence. Journal of Material Science 3.
Journal Article
92, 161101 (2008)
Hole confinement in quantum islands in Ga(AsSb)/GaAs/(AlGa)As heterostructures. Applied Physics Letter 4.
Journal Article
127 (2), pp. 285 - 290 (2007)
Kinetic effects in recombination of optical excitations in disordered quantum heterostructures: Theory and experiment. Journal of Luminescence 5.
Journal Article
90 (24), 241102 (2007)
Dynamic behavior of 1040nm semiconductor disk lasers on a nanosecond time scale. Applied Physics Letters 6.
Journal Article
3 (7), pp. 2481 - 2484 (2006)
Non-radiative recombination of optical excitations in (GaIn)(NAs) quantum wells. Physica Status Solidi C 7.
Journal Article
73 (23), 233201 (2006)
Model of temperature quenching of photoluminescence in disordered semiconductors and comparison to experiment. Physical Review B 8.
Journal Article
71 (16), 165320 (2005)
Time-resolved photoluminescence of type-I and type-II (GaIn)As ∕ Ga(NAs) heterostructures. Physical Review B 9.
Journal Article
7 (1), pp. 115 - 120 (2005)
On the theoretical description of photoluminescence in disordered quantum structures. Journal of Optoelectronics and Advanced Materials 10.
Journal Article
87 (25), 252111 (2005)
Carrier relaxation dynamics in annealed and hydrogenated (GaIn)(NAs)∕GaAs quantum wells. Applied Physics Letters 11.
Journal Article
13 (12), p. 22 - 22 (2002)
Laser materials: Semiconductor quantum-well designer active materials. Optics and Photonics News 12.
Journal Article
14 (6), pp. 762 - 764 (2002)
Quantitative prediction of semiconductor laser characteristics based on low intensity photoluminescence measurements. IEEE Photonics Technology Letters