Journal Article (12)

  1. 1.
    Journal Article
    Zhang, X.; Hantke, K.; Fischer, C.; Schröter, M.: Performance of Polarization-based Stereoscopy Screens. 3d Research 3 (4), pp. 1 - 5 (2012)
  2. 2.
    Journal Article
    Hantke, K.; Horst, S.; Chatterjee, S.; Klar, P. J.; Volz, K.; Stolz, W.; Rühle, W. W.; Masia, F.; Pettinari, G.; Polimeni, A. et al.; Capizzi, M.: Zero-phonon lines of nitrogen-cluster states in GaNxAs1-x:H identified by time-resolved photoluminescence. Journal of Material Science 43, pp. 4344 - 4347 (2008)
  3. 3.
    Journal Article
    Horst, S.; Chatterjee, S.; Hantke, K.; Klar, P. J.; Nemeth, I.; Stolz, W.; Volz, K.; Bückers, C.; Thränhardt, A.; Koch, S. W. et al.; Rühle, W.; Johnson, S. R.; Wang, J.-B.; Zhang, Y.-H.: Hole confinement in quantum islands in Ga(AsSb)/GaAs/(AlGa)As heterostructures. Applied Physics Letter 92, 161101 (2008)
  4. 4.
    Journal Article
    Rubel, O.; Baranovskii, S. D.; Hantke, K.; Kunert, B.; Rühle, W. W.; Thomas, P.; Volz, K.; Stolz, W.: Kinetic effects in recombination of optical excitations in disordered quantum heterostructures: Theory and experiment. Journal of Luminescence 127 (2), pp. 285 - 290 (2007)
  5. 5.
    Journal Article
    Diehl, W.; Brick, P.; Chatterjee, S.; Horst, S.; Hantke, K.; Rühle, W. W.; Stolz, W.; Thränhardt, A.; Koch, S. W.: Dynamic behavior of 1040nm semiconductor disk lasers on a nanosecond time scale. Applied Physics Letters 90 (24), 241102 (2007)
  6. 6.
    Journal Article
    Rubel, O.; Baranovskii, S. D.; Hantke, K.; Rühle, W. W.; Thomas, P.; Volz, K.; Stolz, W.: Non-radiative recombination of optical excitations in (GaIn)(NAs) quantum wells. Physica Status Solidi C 3 (7), pp. 2481 - 2484 (2006)
  7. 7.
    Journal Article
    Rubel, O.; Baranovskii, S. D.; Hantke, K.; Kunert, B.; Rühle, W. W.; Thomas, P.; Volz, K.; Stolz, W.: Model of temperature quenching of photoluminescence in disordered semiconductors and comparison to experiment. Physical Review B 73 (23), 233201 (2006)
  8. 8.
    Journal Article
    Hantke, K.; Heber, J. D.; Schlichenmaier, C.; Thränhardt, A.; Meier, T.; Kunert, B.; Volz, K.; Stolz, W.; Koch, S. W.; Rühle, W. W.: Time-resolved photoluminescence of type-I and type-II (GaIn)As ∕ Ga(NAs) heterostructures. Physical Review B 71 (16), 165320 (2005)
  9. 9.
    Journal Article
    Rubel, O.; Baranovskii, S. D.; Hantke, K.; Heber, J. D.; Koch, J.; Thomas, P.; Marshall, J. M.; Stolz, W.; Rühle, W. W.: On the theoretical description of photoluminescence in disordered quantum structures. Journal of Optoelectronics and Advanced Materials 7 (1), pp. 115 - 120 (2005)
  10. 10.
    Journal Article
    Hantke, K.; Heber, J. D.; Chatterjee, S.; Klar, P. J.; Volz, K.; Stolz, W.; Rühle, W. W.; Polimeni, A.; Capizzi, M.: Carrier relaxation dynamics in annealed and hydrogenated (GaIn)(NAs)∕GaAs quantum wells. Applied Physics Letters 87 (25), 252111 (2005)
  11. 11.
    Journal Article
    Hader, J.; Zakharian, A. R.; Moloney, J.V.; Nelson, T.R.; Siskaninetz, W.J.; Ehret, J.E.; Hantke, K.; Koch, S.W.; Hofmann, M.: Laser materials: Semiconductor quantum-well designer active materials. Optics and Photonics News 13 (12), p. 22 - 22 (2002)
  12. 12.
    Journal Article
    Hader, J.; Zakharian, A.R.; Moloney, J.V.; Nelson, T.R.; Siskaninetz, W.J.; Ehret, J.E.; Hantke, K.; Hofmann, M.; Koch, S.W.: Quantitative prediction of semiconductor laser characteristics based on low intensity photoluminescence measurements. IEEE Photonics Technology Letters 14 (6), pp. 762 - 764 (2002)
 
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